Research Article
A GaAs pHEMT MMIC Doherty Power Amplifier for 5G Mobile Handset
@INPROCEEDINGS{10.4108/eai.7-9-2021.2314954, author={Maryam Sajedin and Issa Elfergani and Jonathan Rodriguez and Manuel Violas and Raed Abd-Alhameed and Monica Fernandez-Barciela and Ahmed M. Abdulkhaleq and Chemseddine Zebiri}, title={A GaAs pHEMT MMIC Doherty Power Amplifier for 5G Mobile Handset}, proceedings={Proceedings of 2nd International Multi-Disciplinary Conference Theme: Integrated Sciences and Technologies, IMDC-IST 2021, 7-9 September 2021, Sakarya, Turkey}, publisher={EAI}, proceedings_a={IMDC-IST}, year={2022}, month={1}, keywords={doherty power amplifier mmic mm-waves}, doi={10.4108/eai.7-9-2021.2314954} }- Maryam Sajedin
Issa Elfergani
Jonathan Rodriguez
Manuel Violas
Raed Abd-Alhameed
Monica Fernandez-Barciela
Ahmed M. Abdulkhaleq
Chemseddine Zebiri
Year: 2022
A GaAs pHEMT MMIC Doherty Power Amplifier for 5G Mobile Handset
IMDC-IST
EAI
DOI: 10.4108/eai.7-9-2021.2314954
Abstract
This paper presents the design procedure of a developed Doherty power amplifier (DPA) based on the 0.1-μm AlGaAs–InGaAs pHEMT technology provided by the WIN Semiconductors foundry. It is demonstrated that adapting a driver stage enhances the gain performance of the DPA. The applied wideband post-matching technique can reduce the chip area and improve the average efficiency. The simulation results indicate that the monolithic drive load modulation PA at 4V operation voltage delivers a maximum output power of 29dBm at 1dB compression point. The proposed DPA can provide the 15dB power gain over the frequency range of 25-27 GHz as well as 35% PAE at peak power and 29% PAE at the 6dB OBO. The MMIC load modulation technique is developed for the 5G mobile handset and it occupies the area size of 4-〖mm〗^2.
