Research Article
A Wide Temperature Range CMOS Bandgap Voltage Reference With 4.689ppm/°C in 65nm
@INPROCEEDINGS{10.4108/eai.24-4-2026.2364982, author={Chuangjia Liao}, title={A Wide Temperature Range CMOS Bandgap Voltage Reference With 4.689ppm/°C in 65nm}, proceedings={Proceedings of the 3rd International Conference on Mechanics, Electronics Engineering and Automation, ICMEEA 2026, April 24-26, 2026, Singapore, Singapore}, publisher={EAI}, proceedings_a={ICMEEA}, year={2026}, month={9}, keywords={Temperature Compensation BGR Low TC Power Supply Rejection Ratio Wide Temperature Range}, doi={10.4108/eai.24-4-2026.2364982} }- Chuangjia Liao
Year: 2026
A Wide Temperature Range CMOS Bandgap Voltage Reference With 4.689ppm/°C in 65nm
ICMEEA
EAI
DOI: 10.4108/eai.24-4-2026.2364982
Abstract
This paper proposes a low TC BGR voltage source working in a wide temperature range of -45 to 125°C, based on TSMC 65nm. To address the limitation that the TC of traditional first-order temperature-compensated BGRs is difficult to be lower than 10 ppm/°C, this paper proposes an improved method limits the output voltage at the starting point within the temperature range by introducing a resistor, thereby optimizing the output waveform from the traditional parabolic waveform to an approximately sinusoidal waveform, thus effectively reducing the TC without increasing circuit complexity. Simulation results based on the Virtuoso show that, with a power supply of 3.3V and tt corner, this BGR achieves a low TC of 4.689 ppm/°C, a PSRR of -63.5 dB at low frequencies, and a power consumption of 67 μW.