Research Article
New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284211, author={Pascal Dherbecourt and Ahmed El Oualkadi and Eric Joubert and Al Mehdi Bouchour and Wadia Jouha and Mohamed Masmoudi and Olivier Latry}, title={New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration}, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={electronic reliability failure analysis power transistor ageing tests}, doi={10.4108/eai.24-4-2019.2284211} }- Pascal Dherbecourt
Ahmed El Oualkadi
Eric Joubert
Al Mehdi Bouchour
Wadia Jouha
Mohamed Masmoudi
Olivier Latry
Year: 2019
New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284211
Abstract
This paper proposes a methodology to study the reliability and failure analysis of new technologies of power transistors. The use of wide gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) is now a good alternative to meet the integration requirements of energy conversion systems. However, the reliability of these components is a crucial issue. Aging in operating conditions is considered, associated with electrical measurements to highlight nondestructive degradations of the performance of studied transistors. A step of looking for failure mechanisms in the material is made in order to identify any physical degradation. The information collected provide the user with valuable data and help to make an optimum choice of the component which can be integrated into the equipment. The presented work proposes the description of a methodology that meets these requirements and shows the study of two technologies of power transistors used in new generations of power converters.
