Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco

Research Article

Design of a Microstrip Balanced Amplifier Using the Wilkinson Power Divider

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  • @INPROCEEDINGS{10.4108/eai.24-4-2019.2284098,
        author={amine  rachakh and Larbi  El Abdellaoui and Ahmed  Errkik and Abdelali  Tajmouati and Mohamed  Latrach},
        title={Design of a Microstrip Balanced Amplifier Using the Wilkinson Power Divider},
        proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco},
        publisher={EAI},
        proceedings_a={ICCWCS},
        year={2019},
        month={5},
        keywords={power amplifier (pa) gallium arsenide (gaas) field-effect transistor (fet) microstrip technology advanced design system (ads)},
        doi={10.4108/eai.24-4-2019.2284098}
    }
    
  • amine rachakh
    Larbi El Abdellaoui
    Ahmed Errkik
    Abdelali Tajmouati
    Mohamed Latrach
    Year: 2019
    Design of a Microstrip Balanced Amplifier Using the Wilkinson Power Divider
    ICCWCS
    EAI
    DOI: 10.4108/eai.24-4-2019.2284098
amine rachakh1,*, Larbi El Abdellaoui1, Ahmed Errkik1, Abdelali Tajmouati1, Mohamed Latrach2
  • 1: MEET Laboratory, FST of Settat, Hassan 1st University, Morocco
  • 2: Microwave group ESEO Angers, France
*Contact email: rachakh.amine1@gmail.com

Abstract

The broadband bandwidth of power amplifiers is one of the most important features that restrict its wide usage. This work presents a new structure of a broadband power amplifier suitable for ISM band. The proposed amplifier, which is realized with two identical single-stage amplifiers and two power dividers on low loss Epoxy (FR4) substrate with a substrate thickness of 1.6mm and a relative permittivity equal to 4.4. The proposed PA demonstrates a power gain of 16 dB at 2.45GHz. The input and output matching impedances are better than -15dB throughout the band. the power amplifier delivers a maximum output power equal to 16dBm with a flat gain varied between 15-16dB.