Research Article
Design of a Microstrip Balanced Amplifier Using the Wilkinson Power Divider
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284098, author={amine rachakh and Larbi El Abdellaoui and Ahmed Errkik and Abdelali Tajmouati and Mohamed Latrach}, title={Design of a Microstrip Balanced Amplifier Using the Wilkinson Power Divider}, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={power amplifier (pa) gallium arsenide (gaas) field-effect transistor (fet) microstrip technology advanced design system (ads)}, doi={10.4108/eai.24-4-2019.2284098} }- amine rachakh
Larbi El Abdellaoui
Ahmed Errkik
Abdelali Tajmouati
Mohamed Latrach
Year: 2019
Design of a Microstrip Balanced Amplifier Using the Wilkinson Power Divider
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284098
Abstract
The broadband bandwidth of power amplifiers is one of the most important features that restrict its wide usage. This work presents a new structure of a broadband power amplifier suitable for ISM band. The proposed amplifier, which is realized with two identical single-stage amplifiers and two power dividers on low loss Epoxy (FR4) substrate with a substrate thickness of 1.6mm and a relative permittivity equal to 4.4. The proposed PA demonstrates a power gain of 16 dB at 2.45GHz. The input and output matching impedances are better than -15dB throughout the band. the power amplifier delivers a maximum output power equal to 16dBm with a flat gain varied between 15-16dB.
Copyright © 2019–2024 EAI
