Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco

Research Article

A Novel Zero Bias Microstrip MESFET Power Limiter

Download17 downloads
  • @INPROCEEDINGS{10.4108/eai.24-4-2019.2284090,
        author={Khalifa  ECHCHAKHAOUI and Elhassane  ABDELMOUNIM and Hamid  BENNIS and Mohamed  LATRACH},
        title={A Novel Zero Bias Microstrip MESFET Power Limiter},
        proceedings={Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco},
        publisher={EAI},
        proceedings_a={ICCWCS},
        year={2019},
        month={5},
        keywords={microstrip power limiter mesfet transistor schottky diode},
        doi={10.4108/eai.24-4-2019.2284090}
    }
    
  • Khalifa ECHCHAKHAOUI
    Elhassane ABDELMOUNIM
    Hamid BENNIS
    Mohamed LATRACH
    Year: 2019
    A Novel Zero Bias Microstrip MESFET Power Limiter
    ICCWCS
    EAI
    DOI: 10.4108/eai.24-4-2019.2284090
Khalifa ECHCHAKHAOUI1,*, Elhassane ABDELMOUNIM1, Hamid BENNIS2, Mohamed LATRACH3
  • 1: ASTI Laboratory, FST of Settat, Hassan 1St University Settat, Morocco
  • 2: TIM Research Team, EST of Meknes, Moulay Ismail University, Meknes, Morocco
  • 3: RF-EMC Group, ESEO, Angers, France
*Contact email: k.echakhaoui@gmail.com

Abstract

In this article, a novel limiters power is designed and validated by ADS software. The new limiter is based on a mictrostrip circuit and uses MSFET transistors and Schottky diode as actives components. This Power Limiter have been optimized in two steeps: the first circuit is composed of one stage. Simulation of this circuit presents some limitation in termes of limitation rate. To improve this performance, a new circuit composed of two stages is simulated and optimized. The final circuit exhibits 25 dB of limitation rate while insertion loss is -1 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.