Research Article
A Novel Zero Bias Microstrip MESFET Power Limiter
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284090, author={Khalifa ECHCHAKHAOUI and Elhassane ABDELMOUNIM and Hamid BENNIS and Mohamed LATRACH}, title={A Novel Zero Bias Microstrip MESFET Power Limiter}, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={microstrip power limiter mesfet transistor schottky diode}, doi={10.4108/eai.24-4-2019.2284090} }- Khalifa ECHCHAKHAOUI
Elhassane ABDELMOUNIM
Hamid BENNIS
Mohamed LATRACH
Year: 2019
A Novel Zero Bias Microstrip MESFET Power Limiter
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284090
Abstract
In this article, a novel limiters power is designed and validated by ADS software. The new limiter is based on a mictrostrip circuit and uses MSFET transistors and Schottky diode as actives components. This Power Limiter have been optimized in two steeps: the first circuit is composed of one stage. Simulation of this circuit presents some limitation in termes of limitation rate. To improve this performance, a new circuit composed of two stages is simulated and optimized. The final circuit exhibits 25 dB of limitation rate while insertion loss is -1 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.
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