Research Article
Tunnelling FETs, the Non-conventional Transistors: Basics
@INPROCEEDINGS{10.4108/eai.24-3-2022.2319007, author={Dinesh Sheoran and Vijay Raj Shokeen and Pardeep Sangwan and Suman Lata}, title={Tunnelling FETs, the Non-conventional Transistors: Basics}, proceedings={Proceedings of the 3rd International Conference on ICT for Digital, Smart, and Sustainable Development, ICIDSSD 2022, 24-25 March 2022, New Delhi, India}, publisher={EAI}, proceedings_a={ICIDSSD}, year={2023}, month={5}, keywords={tunnel field effect transistors mosfet non-conventional transistors}, doi={10.4108/eai.24-3-2022.2319007} }- Dinesh Sheoran
Vijay Raj Shokeen
Pardeep Sangwan
Suman Lata
Year: 2023
Tunnelling FETs, the Non-conventional Transistors: Basics
ICIDSSD
EAI
DOI: 10.4108/eai.24-3-2022.2319007
Abstract
The tunnel field-effect transistor (TFET) exploits the band to band tunneling (BTBT) phenomenon for carrier injection and this helps to lower the subthreshold swing <60mV/decade due to the absence of thermal (kT/q) dependence. Tunnel Field Effect Transistor has been evolved by T. Baba in 1992, and provides an alternative to conventional switch based on various performance parameters. TFETs show tremendous potential from the low-power applications point of view. However, the challenge to gain a high Ion/Ioff ratio in combination with subthreshold swing <60mV/decade still persists for devices to be used in high-performance circuits. To achieve this, it is required that many technologies to be used in combination for the realization of such hetero-structure TFET devices.
