Research Article
Modeling of Tunneling Current of A Bilayer Armchair Graphene Nanoribbon-Based P-N Junction Diode using Airy Wave-Function
@INPROCEEDINGS{10.4108/eai.12-10-2019.2296546, author={A. Fadhillah and I. Anjaningsih and S. D. Ulhaq and M. F. Fadhillah and Waslaluddin Waslaluddin and E. Suhendi}, title={Modeling of Tunneling Current of A Bilayer Armchair Graphene Nanoribbon-Based P-N Junction Diode using Airy Wave-Function}, proceedings={Proceedings of the 7th Mathematics, Science, and Computer Science Education International Seminar, MSCEIS 2019, 12 October 2019, Bandung, West Java, Indonesia}, publisher={EAI}, proceedings_a={MSCEIS}, year={2020}, month={7}, keywords={bagnr p-n junction diode tunneling current airy function}, doi={10.4108/eai.12-10-2019.2296546} }- A. Fadhillah
I. Anjaningsih
S. D. Ulhaq
M. F. Fadhillah
Waslaluddin Waslaluddin
E. Suhendi
Year: 2020
Modeling of Tunneling Current of A Bilayer Armchair Graphene Nanoribbon-Based P-N Junction Diode using Airy Wave-Function
MSCEIS
EAI
DOI: 10.4108/eai.12-10-2019.2296546
Abstract
Armchair Graphene Nanoribbon (AGNR) is one of the Graphene Nanoribbon (GNR)’s types which can be used as a semiconductor that arrange its width. Because of its tiny width, graphene is great to be applied on devices with tunneling electron-based. In this research, the author models the behavior of tunneling current on a bilayer armchair graphene nanoribbon-based p-n junction diode using Airy function. The modeling’s result shows that the tunneling current has a relation with bias voltage, temperature, and characteristic of BAGNR. The tunneling current is directly proportional to the forward-bias, the width of the BAGNR, and the intrinsic electric field. It is inversely proportional to the temperature. Its value on BAGNR is bigger than on MAGNR due to the effect of interlayer coupling γ0 and γ1 to the energy gap. The tunneling current using the Airy function method and the WKB method have the same tendency and slight different value.