Proceedings of the 7th Mathematics, Science, and Computer Science Education International Seminar, MSCEIS 2019, 12 October 2019, Bandung, West Java, Indonesia

Research Article

Modeling of Tunneling Current in Bilayer Armchair Graphene Nanoribbon−Tunneling Field Effect Transistor by Using Airy Wave Function Approach

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  • @INPROCEEDINGS{10.4108/eai.12-10-2019.2296500,
        author={Shofi Dhiya ‘Ulhaq and Muhammad Fulki Fadhillah and Amelia  Fadhillah and Intan  Anjaningsih and Andhy  Setiawan and Endi  Suhendi},
        title={Modeling of Tunneling Current in Bilayer Armchair Graphene Nanoribbon−Tunneling Field Effect Transistor by Using Airy Wave Function Approach},
        proceedings={Proceedings of the 7th Mathematics, Science, and Computer Science Education International Seminar, MSCEIS 2019, 12 October 2019, Bandung, West Java, Indonesia},
        publisher={EAI},
        proceedings_a={MSCEIS},
        year={2020},
        month={7},
        keywords={airy wave function tunneling current bagnr tfet},
        doi={10.4108/eai.12-10-2019.2296500}
    }
    
  • Shofi Dhiya ‘Ulhaq
    Muhammad Fulki Fadhillah
    Amelia Fadhillah
    Intan Anjaningsih
    Andhy Setiawan
    Endi Suhendi
    Year: 2020
    Modeling of Tunneling Current in Bilayer Armchair Graphene Nanoribbon−Tunneling Field Effect Transistor by Using Airy Wave Function Approach
    MSCEIS
    EAI
    DOI: 10.4108/eai.12-10-2019.2296500
Shofi Dhiya ‘Ulhaq1, Muhammad Fulki Fadhillah1, Amelia Fadhillah1, Intan Anjaningsih1, Andhy Setiawan1, Endi Suhendi1,*
  • 1: Program Studi Fisika, Universitas Pendidikan Indonesia, Bandung 40154, Indonesia
*Contact email: endis@upi.edu

Abstract

Metal oxide semiconductor field-effect transistor (MOSFET) has an important role in electric circuits because of its nano-size. However, MOSFETs have performance limitations to work in ultra-low power, leaky currents, short channel effects, and increased speed. These performance limitations make the tunneling field-effect transistor (TFET) an alternative to replace the MOSFET. In this study, a drain current on devices based on bilayer armchair graphene nanoribbon (BAGNR) was modeled using the Airy function approach. Solving the Schrödinger equation with the Airy function approach produces a transmittance value, and therefore the drain current value can be determined using the Launder formula with the Gauss Legendre Quadrature (GLQ) method. The results of the modeling show that the drain current value increases with the increasing gate voltage (Vg), drain voltage (Vd) and width of BAGNR, while the increase in oxide thickness and temperature decreases the drain current.