Research Article
Electron Beam-induced Light Emission and Transport in GaN Nanowires
@INPROCEEDINGS{10.1109/NANONET.2006.346228, author={J. Tringe and W. MoberlyChan and C. Stevens and A. Davydov and A. Motayed}, title={Electron Beam-induced Light Emission and Transport in GaN Nanowires}, proceedings={1st International ICST Conference on Nano-Networks}, publisher={IEEE}, proceedings_a={NANO-NET}, year={2007}, month={4}, keywords={}, doi={10.1109/NANONET.2006.346228} }- J. Tringe
W. MoberlyChan
C. Stevens
A. Davydov
A. Motayed
Year: 2007
Electron Beam-induced Light Emission and Transport in GaN Nanowires
NANO-NET
IEEE
DOI: 10.1109/NANONET.2006.346228
Abstract
The authors report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined
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