2nd Internationa ICST Conference on Nano-Networks

Research Article

Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron

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  • @INPROCEEDINGS{10.4108/ICST.NANONET2007.2182,
        author={M. Casalino and L. Sirleto and L. Moretti and F. Della Corte and I. Rendina},
        title={Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron},
        proceedings={2nd Internationa ICST Conference on Nano-Networks},
        proceedings_a={NANO-NET},
        year={2010},
        month={5},
        keywords={Fabry-Perot Internal photoemission Photodetectors Resonant cavity enhanced Silicon.},
        doi={10.4108/ICST.NANONET2007.2182}
    }
    
  • M. Casalino
    L. Sirleto
    L. Moretti
    F. Della Corte
    I. Rendina
    Year: 2010
    Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron
    NANO-NET
    ICST
    DOI: 10.4108/ICST.NANONET2007.2182
M. Casalino1,*, L. Sirleto2,*, L. Moretti3,*, F. Della Corte1,*, I. Rendina4,*
  • 1: Università “Mediterranea” di Reggio Calabria Località Feo di Vito - 89060 Reggio Calabria (Italy) Tel. 00390816132345
  • 2: Istittuto per la microelettronica e i micrositemi - CNR Via P. Castellino, 111 - 80131 Napoli (Italy) Tel. 00390816132348
  • 3: Università “Mediterranea” di Reggio Calabria Località Feo di Vito - 89060 Reggio Calabria (Italy)Tel. 00390816132591
  • 4: Istittuto per la microelettronica e imicrositemi - CNR Via P. Castellino, 111 - 80131Napoli (Italy)Tel. 00390816132371
*Contact email: maurizio.casalino@na.imm.cnr.it, luigi.sirleto@na.imm.cnr.it, luigi.moretti@na.imm.cnr.it, francesco.dellacorte@unirc.it, ivo.rendina@na.imm.cnr

Abstract

In this paper, the design of a novel photodetector, working at 1.55μm and completely silicon compatible, is reported. The device is a resonant cavity enhanced (RCE) structure incorporating a silicon photodetector based on the internal photoemission effect. In order to quantify the performance of photodetector, quantum efficiency including the image force effect as a function of bias voltage are analytically calculated. Moreover we propose a comparison among three different Schottky barrier Silicon photodetectors, having as metal layers gold, silver or copper, respectively.