2nd Internationa ICST Conference on Nano-Networks

Research Article

Raman Approach in Silicon Nanostructure at 1.5 micron

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  • @INPROCEEDINGS{10.4108/ICST.NANONET2007.2002,
        author={L Sirleto and M. A. Ferrara and B. Jalali and I. Rendina},
        title={Raman Approach in Silicon Nanostructure at 1.5 micron},
        proceedings={2nd Internationa ICST Conference on Nano-Networks},
        keywords={Raman effect Porous Silicon Nonlinear Optics Raman amplifiers.},
  • L Sirleto
    M. A. Ferrara
    B. Jalali
    I. Rendina
    Year: 2010
    Raman Approach in Silicon Nanostructure at 1.5 micron
    DOI: 10.4108/ICST.NANONET2007.2002
L Sirleto1,*, M. A. Ferrara1,2, B. Jalali3, I. Rendina1
  • 1: Istituto per la Microelettronica e Microsistemi – CNR Via P. Castellino 111 - 80131 Napoli (Italy).
  • 2: DIMET, Università “Mediterranea”, Località Feo di Vito, 89060 Reggio Calabria, Italy.
  • 3: Opto-electronic Circuits and Systems Laboratory, UCLA University of California, Los Angeles, CA 90095 (USA).
*Contact email: lsirleto@na.imm.cnr.it


In the last three years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved significant results. However, limitations inherent to the physics of silicon have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. In this paper, an approach based on Raman scattering in porous silicon is theoretically and experimentally investigated. We prove two significant advantages with respect to silicon: the broadening of the spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss about the prospect of Raman amplifier in porous silicon.