Proceedings of the 1st International Multi-Disciplinary Conference Theme: Sustainable Development and Smart Planning, IMDC-SDSP 2020, Cyperspace, 28-30 June 2020

Research Article

Design of Class E Power Amplifier for Wireless Communication

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  • @INPROCEEDINGS{10.4108/eai.28-6-2020.2297907,
        author={Dina  Ibrahim and Rusul  Abdul Jabbar and Zaid  Ezalden and Ameen  Abdullah},
        title={Design of Class E Power Amplifier for Wireless Communication},
        proceedings={Proceedings of the 1st International Multi-Disciplinary Conference Theme: Sustainable Development and Smart Planning, IMDC-SDSP 2020, Cyperspace, 28-30 June 2020},
        publisher={EAI},
        proceedings_a={IMDC-SDSP},
        year={2020},
        month={9},
        keywords={class e power amplifier switch efficiency},
        doi={10.4108/eai.28-6-2020.2297907}
    }
    
  • Dina Ibrahim
    Rusul Abdul Jabbar
    Zaid Ezalden
    Ameen Abdullah
    Year: 2020
    Design of Class E Power Amplifier for Wireless Communication
    IMDC-SDSP
    EAI
    DOI: 10.4108/eai.28-6-2020.2297907
Dina Ibrahim1,*, Rusul Abdul Jabbar1, Zaid Ezalden1, Ameen Abdullah1
  • 1: Department of Communication - Electronic Engineering - Ninevah University, Iraq
*Contact email: dina.ibrahim@uoninevah.edu.iq

Abstract

The power amplifier is one of the challenging blocks in the implementation of the handset of wireless communication transceivers. In optimum class E, the drain voltage drops to zero and has zero slopes just as the transistor turns on which result is an ideal efficiency of 100%, reduction of switching losses and increase tolerance of component variation. The proposed class E power amplifier using (MOSFET mfphiLF2802A19930106), (FETGaAsfll101me19931021) and (BJTBC32719961209) transistors have been designed in the frequency range of (300MHz- 1.5GHz) and note the change in efficiency and power delivered to the load between these types of transistors.