Research Article
Design of Class E Power Amplifier for Wireless Communication
@INPROCEEDINGS{10.4108/eai.28-6-2020.2297907, author={Dina Ibrahim and Rusul Abdul Jabbar and Zaid Ezalden and Ameen Abdullah}, title={Design of Class E Power Amplifier for Wireless Communication}, proceedings={Proceedings of the 1st International Multi-Disciplinary Conference Theme: Sustainable Development and Smart Planning, IMDC-SDSP 2020, Cyperspace, 28-30 June 2020}, publisher={EAI}, proceedings_a={IMDC-SDSP}, year={2020}, month={9}, keywords={class e power amplifier switch efficiency}, doi={10.4108/eai.28-6-2020.2297907} }- Dina Ibrahim
Rusul Abdul Jabbar
Zaid Ezalden
Ameen Abdullah
Year: 2020
Design of Class E Power Amplifier for Wireless Communication
IMDC-SDSP
EAI
DOI: 10.4108/eai.28-6-2020.2297907
Abstract
The power amplifier is one of the challenging blocks in the implementation of the handset of wireless communication transceivers. In optimum class E, the drain voltage drops to zero and has zero slopes just as the transistor turns on which result is an ideal efficiency of 100%, reduction of switching losses and increase tolerance of component variation. The proposed class E power amplifier using (MOSFET mfphiLF2802A19930106), (FETGaAsfll101me19931021) and (BJTBC32719961209) transistors have been designed in the frequency range of (300MHz- 1.5GHz) and note the change in efficiency and power delivered to the load between these types of transistors.
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