Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco

Research Article

Temperature Effects of GaN HEMTs on the Design of Power Converters

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  • @INPROCEEDINGS{10.4108/eai.24-4-2019.2284227,
        author={Al Mehdi  BOUCHOUR and Pascal  Dherb\^{e}court and Olivier  Latry and Ahmed  El Oualkadi},
        title={Temperature Effects of GaN HEMTs on the Design of Power Converters},
        proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco},
        publisher={EAI},
        proceedings_a={ICCWCS},
        year={2019},
        month={5},
        keywords={characterization; modeling; temperature; gan; hemt; levenberg- marquardt},
        doi={10.4108/eai.24-4-2019.2284227}
    }
    
  • Al Mehdi BOUCHOUR
    Pascal Dherbécourt
    Olivier Latry
    Ahmed El Oualkadi
    Year: 2019
    Temperature Effects of GaN HEMTs on the Design of Power Converters
    ICCWCS
    EAI
    DOI: 10.4108/eai.24-4-2019.2284227
Al Mehdi BOUCHOUR1,*, Pascal Dherbécourt2, Olivier Latry2, Ahmed El Oualkadi3
  • 1: GPM UMR CNRS 6634, LabTIC Normandie Univ, IUT, INSA Rouen, CNRS, Université Abdelmalek Essaadi Meknes, Morocco
  • 2: GPM UMR CNRS 6634 Normandie Univ, IUT, INSA Rouen, CNRS Rouen, France
  • 3: LabTIC - Université Abdelmalek Essaadi Ecole Nationale des Sciences Appliquées Tanger, Morocco
*Contact email: bouchour7@gmail.com

Abstract

This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.