Research Article
Temperature Effects of GaN HEMTs on the Design of Power Converters
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284227, author={Al Mehdi BOUCHOUR and Pascal Dherb\^{e}court and Olivier Latry and Ahmed El Oualkadi}, title={Temperature Effects of GaN HEMTs on the Design of Power Converters}, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={characterization; modeling; temperature; gan; hemt; levenberg- marquardt}, doi={10.4108/eai.24-4-2019.2284227} }- Al Mehdi BOUCHOUR
Pascal Dherbécourt
Olivier Latry
Ahmed El Oualkadi
Year: 2019
Temperature Effects of GaN HEMTs on the Design of Power Converters
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284227
Abstract
This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.
