Research Article
Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284102, author={Mohamed Ribate and Rachid Mandry and Larbi El Abdellaoui and Ahmed Errkik and Mohamed Latrach}, title={Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.}, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={broadband power amplifier real frequency technique solid state gaas}, doi={10.4108/eai.24-4-2019.2284102} }- Mohamed Ribate
Rachid Mandry
Larbi El Abdellaoui
Ahmed Errkik
Mohamed Latrach
Year: 2019
Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284102
Abstract
This paper proposes the research of a single stage Broadband Solid State Power Amplifier (BPA) based on ATF13786 transistor, using GaAs process. This BPA operates in the frequency band ranging from 1.35 GHz to 3 GHz which covers the mainstream communication standards running in L and S Bands. The design approach is based on the real frequency technique. The simulated results are obtained by using ADS circuit simulator. In order to improve the broadband response, a multi-section quarter wave impedance transformer combined with an approximate transformation of a previously designed lumped elements into a transmission lines are used. The simulation results show a saturated output power of 17.85 dBm, with PAE of the 11% and a maximum power gain of 16.68 dB.
