Research Article
A New Modeling of the Junction Metal Semiconductor for Rectenna System
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284081, author={Abdelhak Hamid allah and Ahmed Errkik and Jamal Zbitou and Larbi El Abdellaoui and Abdelali Tajamouati and Mohamed Latrach}, title={A New Modeling of the Junction Metal Semiconductor for Rectenna System}, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={junction metal-semiconductor gaas schottky diode schottky barrier rectenna diode modeling}, doi={10.4108/eai.24-4-2019.2284081} }- Abdelhak Hamid allah
Ahmed Errkik
Jamal Zbitou
Larbi El Abdellaoui
Abdelali Tajamouati
Mohamed Latrach
Year: 2019
A New Modeling of the Junction Metal Semiconductor for Rectenna System
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284081
Abstract
This article presents a new design and optimization of the junction MetalSemiconductor (Au/n-GaAs) optimized in performances.This study has as objective the design of a new Schottky diode which is dedicated to the design of new RF-DC rectifiers in order to increase and to improve the performances of rectenna, and the microwave applications in general. The modelling is based initially on the determination of the breakdown voltage and then the calculation and optimization of all the principal parameters of the Schottky diode. For validation, the proposed study is compared with the commercial diodes
Copyright © 2019–2024 EAI
