Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco

Research Article

A New Modeling of the Junction Metal Semiconductor for Rectenna System

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  • @INPROCEEDINGS{10.4108/eai.24-4-2019.2284081,
        author={Abdelhak  Hamid allah and Ahmed  Errkik and Jamal  Zbitou and Larbi  El Abdellaoui and Abdelali  Tajamouati and Mohamed  Latrach},
        title={A New Modeling of the Junction Metal Semiconductor for Rectenna System},
        proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco},
        publisher={EAI},
        proceedings_a={ICCWCS},
        year={2019},
        month={5},
        keywords={junction metal-semiconductor gaas schottky diode schottky barrier rectenna diode modeling},
        doi={10.4108/eai.24-4-2019.2284081}
    }
    
  • Abdelhak Hamid allah
    Ahmed Errkik
    Jamal Zbitou
    Larbi El Abdellaoui
    Abdelali Tajamouati
    Mohamed Latrach
    Year: 2019
    A New Modeling of the Junction Metal Semiconductor for Rectenna System
    ICCWCS
    EAI
    DOI: 10.4108/eai.24-4-2019.2284081
Abdelhak Hamid allah1,*, Ahmed Errkik1, Jamal Zbitou1, Larbi El Abdellaoui1, Abdelali Tajamouati1, Mohamed Latrach2
  • 1: LMEET Laboratory FST of Settat Hassan 1st University Morocco
  • 2: Microwave group ESEO Angers France
*Contact email: abdelhakhamidallah@gmail.com

Abstract

This article presents a new design and optimization of the junction MetalSemiconductor (Au/n-GaAs) optimized in performances.This study has as objective the design of a new Schottky diode which is dedicated to the design of new RF-DC rectifiers in order to increase and to improve the performances of rectenna, and the microwave applications in general. The modelling is based initially on the determination of the breakdown voltage and then the calculation and optimization of all the principal parameters of the Schottky diode. For validation, the proposed study is compared with the commercial diodes