Research Article
A SPICE IGBT Model with easy parameters extraction
@INPROCEEDINGS{10.4108/eai.24-4-2019.2284073, author={yassine Hadini and Abdelghafour Galadi and Adil Echchelh}, title={A SPICE IGBT Model with easy parameters extraction }, proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco}, publisher={EAI}, proceedings_a={ICCWCS}, year={2019}, month={5}, keywords={igbt spice model mosfet diode}, doi={10.4108/eai.24-4-2019.2284073} }- yassine Hadini
Abdelghafour Galadi
Adil Echchelh
Year: 2019
A SPICE IGBT Model with easy parameters extraction
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284073
Abstract
An accurate IGBT model is presented in this paper. It is based on the IGBT physical structure. The model uses an equivalent circuit which combines a MOSFET, controlled by a voltage-controlled voltage source, in series with a diode. the required parameters can be extracted with a simple procedure from the datasheet dc characteristics given by the manufacturers. The results of the comparison between the simulation and the datasheet information shows an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.
