A SPICE IGBT Model with easy parameters extraction

yassine Hadini; Abdelghafour Galadi; Adil Echchelh

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco

Research Article

A SPICE IGBT Model with easy parameters extraction

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@INPROCEEDINGS{10.4108/eai.24-4-2019.2284073,
    author={yassine  Hadini and Abdelghafour  Galadi and Adil  Echchelh},
    title={A SPICE IGBT Model with easy parameters extraction },
    proceedings={Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofa\~{n}l University -K\^{e}nitra- Morocco},
    publisher={EAI},
    proceedings_a={ICCWCS},
    year={2019},
    month={5},
    keywords={igbt spice model mosfet diode},
    doi={10.4108/eai.24-4-2019.2284073}
}

yassine Hadini
Abdelghafour Galadi
Adil Echchelh
Year: 2019
A SPICE IGBT Model with easy parameters extraction
ICCWCS
EAI
DOI: 10.4108/eai.24-4-2019.2284073

yassine Hadini¹^,*, Abdelghafour Galadi², Adil Echchelh¹

1: Laboratory of Electrical Engineering and Energy System, Department of physics Faculty of Sciences, Ibn Tofail University, Kenitra, Morocco
2: Team: Electronic, Electrical engineering, Instrumentation and Imaging, National School of Applied Sciences, Cadi Ayyad University, Safi, Morocco

*Contact email: yassine.hadini@uit.ac.ma

Abstract

An accurate IGBT model is presented in this paper. It is based on the IGBT physical structure. The model uses an equivalent circuit which combines a MOSFET, controlled by a voltage-controlled voltage source, in series with a diode. the required parameters can be extracted with a simple procedure from the datasheet dc characteristics given by the manufacturers. The results of the comparison between the simulation and the datasheet information shows an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.

Keywords: igbt spice model mosfet diode

Published: 2019-05-23
Publisher: EAI

: http://dx.doi.org/10.4108/eai.24-4-2019.2284073