Proceedings of the 5th International Conference on Innovation in Education, Science, and Culture, ICIESC 2023, 24 October 2023, Medan, Indonesia

Research Article

Effect of ITO Poling Temperature and Silicon Cover on PVDF Sensor

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  • @INPROCEEDINGS{10.4108/eai.24-10-2023.2342359,
        author={Suprapto  Suprapto and Listyanto  Listyanto and Safri  Gunawan and Eswanto  Eswanto and Jubaidah  Jubaidah},
        title={Effect of ITO Poling Temperature and Silicon Cover  on PVDF Sensor},
        proceedings={Proceedings of the 5th International Conference on Innovation in Education, Science, and Culture, ICIESC 2023, 24 October 2023, Medan, Indonesia},
        publisher={EAI},
        proceedings_a={ICIESC},
        year={2024},
        month={1},
        keywords={ito poling pvdf sensor protective piezoelectric},
        doi={10.4108/eai.24-10-2023.2342359}
    }
    
  • Suprapto Suprapto
    Listyanto Listyanto
    Safri Gunawan
    Eswanto Eswanto
    Jubaidah Jubaidah
    Year: 2024
    Effect of ITO Poling Temperature and Silicon Cover on PVDF Sensor
    ICIESC
    EAI
    DOI: 10.4108/eai.24-10-2023.2342359
Suprapto Suprapto1,*, Listyanto Listyanto1, Safri Gunawan1, Eswanto Eswanto1, Jubaidah Jubaidah2
  • 1: Department of Mechanical Engineering. Universitas Negeri Medan, Indonesia
  • 2: Department of Physics, Faculty of Mathematics and Natural Sciences. Universitas Negeri Medan, Indonesia
*Contact email: suprapto@unimed.ac.id

Abstract

This article examines the influence of poling temperature and cover on PVDF film sensors. The PVDF films were fabricated using the uniaxial stretching method (R=5) at 80°C. A novel ITO poling technique was employed in a vacuum oven, varying temperatures from 80°C to 120°C. The study evaluated the response of PVDF thin film sensors to impact tests involving steel balls of different weights with constant heights. Analysis of the PVDF sensor's output voltage response, considering the elasticity of the supporting material and impact force, revealed that higher poling temperatures and silicon support led to increased output voltage response and sensitivity in the PVDF film sensor.