Research Article
Effect of ITO Poling Temperature and Silicon Cover on PVDF Sensor
@INPROCEEDINGS{10.4108/eai.24-10-2023.2342359, author={Suprapto Suprapto and Listyanto Listyanto and Safri Gunawan and Eswanto Eswanto and Jubaidah Jubaidah}, title={Effect of ITO Poling Temperature and Silicon Cover on PVDF Sensor}, proceedings={Proceedings of the 5th International Conference on Innovation in Education, Science, and Culture, ICIESC 2023, 24 October 2023, Medan, Indonesia}, publisher={EAI}, proceedings_a={ICIESC}, year={2024}, month={1}, keywords={ito poling pvdf sensor protective piezoelectric}, doi={10.4108/eai.24-10-2023.2342359} }- Suprapto Suprapto
Listyanto Listyanto
Safri Gunawan
Eswanto Eswanto
Jubaidah Jubaidah
Year: 2024
Effect of ITO Poling Temperature and Silicon Cover on PVDF Sensor
ICIESC
EAI
DOI: 10.4108/eai.24-10-2023.2342359
Abstract
This article examines the influence of poling temperature and cover on PVDF film sensors. The PVDF films were fabricated using the uniaxial stretching method (R=5) at 80°C. A novel ITO poling technique was employed in a vacuum oven, varying temperatures from 80°C to 120°C. The study evaluated the response of PVDF thin film sensors to impact tests involving steel balls of different weights with constant heights. Analysis of the PVDF sensor's output voltage response, considering the elasticity of the supporting material and impact force, revealed that higher poling temperatures and silicon support led to increased output voltage response and sensitivity in the PVDF film sensor.
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