Research Article
Design, fabrication and characterization of an α - Si:H / α - SiCN waveguide multistack for electro-optical modulation
@INPROCEEDINGS{10.4108/ICST.NANONET2007.2221, author={Sandro Rao and Maria A. Nigro and Francesco Suriano and Francesco G. Della Corte and Caterina Summonte and Alberto Scandurra}, title={Design, fabrication and characterization of an α - Si:H / α - SiCN waveguide multistack for electro-optical modulation}, proceedings={2nd Internationa ICST Conference on Nano-Networks}, proceedings_a={NANO-NET}, year={2010}, month={5}, keywords={Integrated optics modulator electrooptics electroabsorption waveguides.}, doi={10.4108/ICST.NANONET2007.2221} }- Sandro Rao
Maria A. Nigro
Francesco Suriano
Francesco G. Della Corte
Caterina Summonte
Alberto Scandurra
Year: 2010
Design, fabrication and characterization of an α - Si:H / α - SiCN waveguide multistack for electro-optical modulation
NANO-NET
ICST
DOI: 10.4108/ICST.NANONET2007.2221
Abstract
This paper reports the design, fabrication and characterization of a planar waveguide based on an hydrogenated amorphous silicon (α-Si:H) - silicon carbonitride (SiCxNy) multistack for the realization of passive and active optical components at the wavelength 1.3--1.5 μm. The waveguide was realized by low temperature plasma enhanced chemical vapour deposition (PECVD) compatible with standard microelectronic technologies. Electro-optical modulation at λ= 1.5 μm is demonstrated in this waveguide. The device operates by varying the free carrier concentration to change the Si absorption coefficient in the guiding region. It has been modelled using the two-dimensional (2-D) device simulation package SILVACO and the optical simulator Beam PROP to determine its electrical and optical performances, respectively.
