2nd Internationa ICST Conference on Nano-Networks

Research Article

Design, fabrication and characterization of an α - Si:H / α - SiCN waveguide multistack for electro-optical modulation

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  • @INPROCEEDINGS{10.4108/ICST.NANONET2007.2221,
    author={Sandro Rao and Maria A. Nigro and Francesco Suriano and Francesco G. Della Corte and Caterina Summonte and Alberto Scandurra},
    title={Design, fabrication and characterization of an α - Si:H / α - SiCN waveguide multistack for electro-optical modulation},
    proceedings={2nd Internationa ICST Conference on Nano-Networks},
    proceedings_a={NANO-NET},
    year={2010},
    month={5},
    keywords={Integrated optics modulator electrooptics electroabsorption waveguides.},
    doi={10.4108/ICST.NANONET2007.2221}
}
  • Sandro Rao
    Maria A. Nigro
    Francesco Suriano
    Francesco G. Della Corte
    Caterina Summonte
    Alberto Scandurra
    Year: 2010
    Design, fabrication and characterization of an α - Si:H / α - SiCN waveguide multistack for electro-optical modulation
    NANO-NET
    ICST
    DOI: 10.4108/ICST.NANONET2007.2221
Sandro Rao1,*, Maria A. Nigro1, Francesco Suriano1, Francesco G. Della Corte1, Caterina Summonte2, Alberto Scandurra3
  • 1: Department of Information Science, Mathematics, Electronics and Transportations (DIMET), Mediterranea University, Via Graziella Località Feo di VitoI-89060 Reggio Calabria, Italy +39 0965875284
  • 2: IMM-CNR Unit of Bologna, Via Gobetti, I- 40129, Bologna, Italy.
  • 3: ST Microelectronics Stradale Primosole, 5095123 Catania, Italy.
*Contact email: sandro.rao@unirc.it

Abstract

This paper reports the design, fabrication and characterization of a planar waveguide based on an hydrogenated amorphous silicon (α-Si:H) - silicon carbonitride (SiCxNy) multistack for the realization of passive and active optical components at the wavelength 1.3--1.5 μm. The waveguide was realized by low temperature plasma enhanced chemical vapour deposition (PECVD) compatible with standard microelectronic technologies. Electro-optical modulation at λ= 1.5 μm is demonstrated in this waveguide. The device operates by varying the free carrier concentration to change the Si absorption coefficient in the guiding region. It has been modelled using the two-dimensional (2-D) device simulation package SILVACO and the optical simulator Beam PROP to determine its electrical and optical performances, respectively.

Keywords
Integrated optics modulator electrooptics electroabsorption waveguides.
Published
2010-05-16
Modified
2011-09-12
http://dx.doi.org/10.4108/ICST.NANONET2007.2221
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