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ChinaCom2009-Optical Communications and Networking Symposium

Research Article

Low Contrast Double Slot Structure Based Optomechanical Sensor

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  • @INPROCEEDINGS{10.1109/CHINACOM.2009.5339834,
        author={Muddassir Iqbal and Zheng Zheng and Jiansheng Liu},
        title={Low Contrast Double Slot Structure Based Optomechanical Sensor},
        proceedings={ChinaCom2009-Optical Communications and Networking Symposium},
        publisher={IEEE},
        proceedings_a={CHINACOM2009-OCN},
        year={2009},
        month={11},
        keywords={- FDTD slot waveguides quasi-TE power confinement factor optomechanical sensor.},
        doi={10.1109/CHINACOM.2009.5339834}
    }
    
  • Muddassir Iqbal
    Zheng Zheng
    Jiansheng Liu
    Year: 2009
    Low Contrast Double Slot Structure Based Optomechanical Sensor
    CHINACOM2009-OCN
    IEEE
    DOI: 10.1109/CHINACOM.2009.5339834
Muddassir Iqbal1,*, Zheng Zheng2,*, Jiansheng Liu3
  • 1: 1. National University of Science & Technology. H-12, Islamabad, PAKISTAN School of electronic and information engineering, H-12, Islamabad, PAKISTAN Beihang University, Beijing, CHINA
  • 2: 2. School of electronic and information engineering Beihang University, Beijing, CHINA
  • 3: 2. School of electronic and information engineering, Beihang University, Beijing, CHINA
*Contact email: scholar547@gmail.com, zhengzheng@buaa.edu.cn

Abstract

Slot waveguide structure gained attention due to high confinement of power inside low index slot region. The high e-field confinement is dependent upon various geometrical parameters. A double slot structure where two low index slots of hard material in high index cladding of compressible material is proposed. Power confinement factor dependency upon distance between low index slots has been numerically computed. Sufficient numerical results obtained lead to the proposal of optomechanical sensor based upon proposed double slot structure.

Keywords
- FDTD slot waveguides quasi-TE power confinement factor optomechanical sensor.
Published
2009-11-20
Publisher
IEEE
Modified
2010-05-16
http://dx.doi.org/10.1109/CHINACOM.2009.5339834
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