6H-SiC Based Power VJFET and Its Temperature Dependence

Amir Khan; Mohd. Hasan; Anwar Sadat; Shamsuz Usmani

Quality, Reliability, Security and Robustness in Heterogeneous Networks. 9th International Conference, QShine 2013, Greader Noida, India, January 11-12, 2013, Revised Selected Papers

Research Article

6H-SiC Based Power VJFET and Its Temperature Dependence

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@INPROCEEDINGS{10.1007/978-3-642-37949-9_28,
    author={Amir Khan and Mohd. Hasan and Anwar Sadat and Shamsuz Usmani},
    title={6H-SiC Based Power VJFET and Its Temperature Dependence},
    proceedings={Quality, Reliability, Security and Robustness in Heterogeneous Networks. 9th International Conference, QShine 2013, Greader Noida, India, January 11-12, 2013, Revised Selected Papers},
    proceedings_a={QSHINE},
    year={2013},
    month={7},
    keywords={Breakdown voltage VJFET channel doping SiC},
    doi={10.1007/978-3-642-37949-9_28}
}

Amir Khan
Mohd. Hasan
Anwar Sadat
Shamsuz Usmani
Year: 2013
6H-SiC Based Power VJFET and Its Temperature Dependence
QSHINE
Springer
DOI: 10.1007/978-3-642-37949-9_28

Amir Khan¹^,*, Mohd. Hasan¹, Anwar Sadat¹, Shamsuz Usmani¹

1: Aligarh Muslim University

*Contact email: amiramu10@gmail.com

Abstract

In this paper 6H-SiC VJFET has been shown and the s device characteristics are also shown. Further the optimization is also carried out with respect to the breakdown voltage. 6H-SiC VJFETs breakdown characteristic is also plotted and the parameter dependence of breakdown voltage is also shown. Electric field across the channel and across the channel and across the device length is also plotted.

Keywords: Breakdown voltage VJFET channel doping SiC

Published: 2013-07-09

: http://dx.doi.org/10.1007/978-3-642-37949-9_28