Research Article
On the Reliability of Interconnected CMOS Gates Considering MOSFET Threshold-Voltage Variations
@INPROCEEDINGS{10.1007/978-3-642-04850-0_33, author={Mawahib Sulieman}, title={On the Reliability of Interconnected CMOS Gates Considering MOSFET Threshold-Voltage Variations}, proceedings={Towards Brain-inspired Interconnects and Circuits}, proceedings_a={TBIC}, year={2012}, month={5}, keywords={Reliability threshold voltage CMOS gates}, doi={10.1007/978-3-642-04850-0_33} }- Mawahib Sulieman
Year: 2012
On the Reliability of Interconnected CMOS Gates Considering MOSFET Threshold-Voltage Variations
TBIC
Springer
DOI: 10.1007/978-3-642-04850-0_33
Abstract
This paper discusses the effects of MOSFET threshold voltage variations on the reliability of nanometer-scale CMOS logic gates. The reliability is quantified in terms of the probability-of-failure of individual CMOS gates, which is obtained from extensive Monte Carlo simulations of these gates. The study considers different nano-scale CMOS technology generations and compares the effect of threshold voltage variations on the reliability at the gate level. The results presented here show a clear dependency pattern of reliability on the gate’s input combinations (vectors). The results also show that both the NAND and Majority logic gates can tolerate up to 40% of threshold voltage variations in a 90nm technology, while only up to 20% at the 22nm technology node.
