Research Article
A 0.6–2.4 GHz Broadband GaN HEMT Power Amplifier with 79.8% Maximum Drain Efficiency
@INPROCEEDINGS{10.1007/978-3-319-60753-5_23, author={Chun Ni and Zhongxiang Zhang and Meng Kong and Mingsheng Chen and Hui Wang and Xianliang Wu}, title={A 0.6--2.4 GHz Broadband GaN HEMT Power Amplifier with 79.8\% Maximum Drain Efficiency}, proceedings={Industrial IoT Technologies and Applications. Second EAI International Conference, Industrial IoT 2017, Wuhu, China, March 25--26, 2017, Proceedings}, proceedings_a={INDUSTRIALIOT}, year={2017}, month={9}, keywords={Power amplifier Continuous Class-F Hybrid continuous modes Low-pass filter}, doi={10.1007/978-3-319-60753-5_23} }- Chun Ni
Zhongxiang Zhang
Meng Kong
Mingsheng Chen
Hui Wang
Xianliang Wu
Year: 2017
A 0.6–2.4 GHz Broadband GaN HEMT Power Amplifier with 79.8% Maximum Drain Efficiency
INDUSTRIALIOT
Springer
DOI: 10.1007/978-3-319-60753-5_23
Abstract
A highly efficient and broadband 10 W GaN HEMT power amplifier (PA) is presented, which employs the hybrid PA mode, transferring between continuous Class-F, continuous Class-B/J and continuous inverse Class-F. A GaN PA is designed and realized based on this mode-transferring operation using low-pass filter output matching network. The maximum theoretical efficiency of this hybrid continuous modes PA is more than 78.5%. Specifically, the operating bandwidth is determined by the low pass filter output matching network and the theoretical bandwidth can achieved multi-octave. The proposed design strategy is experimentally verified by a 0.6–2.4 GHz PA design with 79.8% maximum drain efficiency and 10 W output power. The footprint of the fabricated PA is 75 mm 40 mm.
