Research Article
Effect of SnO2Doping on the Performance of High Voltage ZnO Varistors
@INPROCEEDINGS{10.1007/978-3-031-31733-0_15, author={Bowen Wang and Zhiyao Fu and Anting Kong}, title={Effect of SnO2Doping on the Performance of High Voltage ZnO Varistors}, proceedings={Smart Grid and Innovative Frontiers in Telecommunications. 7th EAI International Conference, SmartGIFT 2022, Changsha, China, December 10-12, 2022, Proceedings}, proceedings_a={SMARTGIFT}, year={2023}, month={5}, keywords={SnO2 Doping ZnO Varistors Energy withstanding Capacity Doping Amount}, doi={10.1007/978-3-031-31733-0_15} }- Bowen Wang
Zhiyao Fu
Anting Kong
Year: 2023
Effect of SnO2Doping on the Performance of High Voltage ZnO Varistors
SMARTGIFT
Springer
DOI: 10.1007/978-3-031-31733-0_15
Abstract
The effect of the SnO2doping on the structure and the electrical performance of ZnO varistors with high voltage was systematically studied. When the doping amount of SnO2was small, the main effect was to promote the growth of grains. As the doping amount increased, SnO2led to the formation of the Zn2SnO4spinel, inhibiting the growth of ZnO grains. The donor concentration, the boundary barrier and the surface state density decreased first and then increased, respectively. By proper SnO2doping, the key performance parameters of the high voltage varistors were improved, where the breakdown voltage gradient was increased from 193.0 to 208.5 V( \cdot )mm−1, the voltage ratio was reduced from 1.74 to 1.73, and the 2 ms square waveform impulse energy withstanding capacity was increased from 200 to 250 A.
