
Research Article
Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control
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@INPROCEEDINGS{10.1007/978-3-030-97124-3_25, author={Yue Qiu and En Fang and Delu Li}, title={Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control}, proceedings={Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings}, proceedings_a={SIMUTOOLS}, year={2022}, month={3}, keywords={SiC MOSFET Switching loss}, doi={10.1007/978-3-030-97124-3_25} }
- Yue Qiu
En Fang
Delu Li
Year: 2022
Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control
SIMUTOOLS
Springer
DOI: 10.1007/978-3-030-97124-3_25
Abstract
The superior electrical and thermal properties of silicon carbide (SiC) power electronic devices, compared with silicon (Si) devices, lead to high efficiency and low volume in power converter designs. In this paper, the simulation model of the SiC MOSFETs is built, and the dynamic and static performance is obtained. The switching loss of SiC devices for AC motor control with pulse width modulation is calculated and analyzed.
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