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Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings

Research Article

Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control

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  • @INPROCEEDINGS{10.1007/978-3-030-97124-3_25,
        author={Yue Qiu and En Fang and Delu Li},
        title={Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control},
        proceedings={Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings},
        proceedings_a={SIMUTOOLS},
        year={2022},
        month={3},
        keywords={SiC MOSFET Switching loss},
        doi={10.1007/978-3-030-97124-3_25}
    }
    
  • Yue Qiu
    En Fang
    Delu Li
    Year: 2022
    Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control
    SIMUTOOLS
    Springer
    DOI: 10.1007/978-3-030-97124-3_25
Yue Qiu1, En Fang1,*, Delu Li2
  • 1: School of Electrical and Control Engineering, Xuzhou University of Technology, Xuzhou
  • 2: Jiangsu Vocational Institute of Architecture Technology, Xuzhou
*Contact email: fangen@cumt.edu.cn

Abstract

The superior electrical and thermal properties of silicon carbide (SiC) power electronic devices, compared with silicon (Si) devices, lead to high efficiency and low volume in power converter designs. In this paper, the simulation model of the SiC MOSFETs is built, and the dynamic and static performance is obtained. The switching loss of SiC devices for AC motor control with pulse width modulation is calculated and analyzed.

Keywords
SiC MOSFET Switching loss
Published
2022-03-31
Appears in
SpringerLink
http://dx.doi.org/10.1007/978-3-030-97124-3_25
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