Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control

Yue Qiu; En Fang; Delu Li

Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings

Research Article

Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control

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@INPROCEEDINGS{10.1007/978-3-030-97124-3_25,
    author={Yue Qiu and En Fang and Delu Li},
    title={Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control},
    proceedings={Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings},
    proceedings_a={SIMUTOOLS},
    year={2022},
    month={3},
    keywords={SiC MOSFET Switching loss},
    doi={10.1007/978-3-030-97124-3_25}
}

Yue Qiu
En Fang
Delu Li
Year: 2022
Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control
SIMUTOOLS
Springer
DOI: 10.1007/978-3-030-97124-3_25

Yue Qiu¹, En Fang¹^,*, Delu Li²

1: School of Electrical and Control Engineering, Xuzhou University of Technology, Xuzhou
2: Jiangsu Vocational Institute of Architecture Technology, Xuzhou

*Contact email: fangen@cumt.edu.cn

Abstract

The superior electrical and thermal properties of silicon carbide (SiC) power electronic devices, compared with silicon (Si) devices, lead to high efficiency and low volume in power converter designs. In this paper, the simulation model of the SiC MOSFETs is built, and the dynamic and static performance is obtained. The switching loss of SiC devices for AC motor control with pulse width modulation is calculated and analyzed.

Keywords: SiC MOSFET Switching loss

Published: 2022-03-31
Appears in: SpringerLink

: http://dx.doi.org/10.1007/978-3-030-97124-3_25

Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control

Abstract

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