Research Article
Characteristics and Application of Cascode GaN HEMT
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@INPROCEEDINGS{10.1007/978-3-030-97124-3_17, author={En Fang}, title={Characteristics and Application of Cascode GaN HEMT}, proceedings={Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings}, proceedings_a={SIMUTOOLS}, year={2022}, month={3}, keywords={Cascode GaN device Characteristics}, doi={10.1007/978-3-030-97124-3_17} }- En Fang
Year: 2022
Characteristics and Application of Cascode GaN HEMT
SIMUTOOLS
Springer
DOI: 10.1007/978-3-030-97124-3_17
Abstract
For the particular structure of cascode GaN HEMT, the parameters related to its output characteristics, transfer characteristics, driving characteristics, and switching characteristics are compared with Si MOSFETs under the same voltage and current level. And it is better than Si MOSFET. To obtain accurate switching loss and clarify the influence of various parameters on the switching process, a practical segmentation analysis model is established for the dynamic process of cascode GaN HEMT turn-on and turn-off, which is verified by the dual-pulse test hardware platform. The prediction of the process voltage and current waveform is accurate.
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