Research Article
Research on CRM Boost PFC Converter Based on GaN Device
@INPROCEEDINGS{10.1007/978-3-030-97124-3_15, author={Yao Ding and En Fang}, title={Research on CRM Boost PFC Converter Based on GaN Device}, proceedings={Simulation Tools and Techniques. 13th EAI International Conference, SIMUtools 2021, Virtual Event, November 5-6, 2021, Proceedings}, proceedings_a={SIMUTOOLS}, year={2022}, month={3}, keywords={Boost PFC converter Critical current mode GaN devices}, doi={10.1007/978-3-030-97124-3_15} }- Yao Ding
En Fang
Year: 2022
Research on CRM Boost PFC Converter Based on GaN Device
SIMUTOOLS
Springer
DOI: 10.1007/978-3-030-97124-3_15
Abstract
There is a need for Power Factor Correction (PFC) converters to improve performance and reduce device size while maintaining a high power factor in the consumer electronics arena. Increasing the switching frequency is the essential way to increase the power density of the PFC converter. When the switching frequency of the converter is close to the MHz level, the switching loss of the conventional Si MOSFET increases sharply, resulting in a decrease in the overall efficiency of the converter. The dual-pulse test platform based on the cascode GaN transistor TPH3206PD and the experimental platform of 200 W single-phase CRM boost PFC converter is introduced. Then, the stability of the high-frequency driving circuit of the GaN device is verified by the dual-pulse test platform, which effectively avoids the false turn-off phenomenon in the turn-on process. The switching loss of TPH3206PD is measured experimentally, and the accuracy of theoretical calculation is verified. The experimental results show that when the operating frequency of the CRM boost PFC converter is close to 1 MHz. GaN devices can effectively reduce switching loss and improve overall efficiency.
