Research Article
Performance Analysis of Microstrip Antenna with Semi-eliptical Slotted Patch and Defected Ground Structure at 28 GHz for 5G Communication Systems
@INPROCEEDINGS{10.1007/978-3-030-93709-6_20, author={Ayane Lebeta Goshu and Mulugeta Tegegn Gemeda and Kinde Anlay Fante}, title={Performance Analysis of Microstrip Antenna with Semi-eliptical Slotted Patch and Defected Ground Structure at 28 GHz for 5G Communication Systems}, proceedings={Advances of Science and Technology. 9th EAI International Conference, ICAST 2021, Hybrid Event, Bahir Dar, Ethiopia, August 27--29, 2021, Proceedings, Part I}, proceedings_a={ICAST}, year={2022}, month={1}, keywords={Bandwidth Gain Etched structure Fifth-generation (5G) Microstrip patch antenna}, doi={10.1007/978-3-030-93709-6_20} }- Ayane Lebeta Goshu
Mulugeta Tegegn Gemeda
Kinde Anlay Fante
Year: 2022
Performance Analysis of Microstrip Antenna with Semi-eliptical Slotted Patch and Defected Ground Structure at 28 GHz for 5G Communication Systems
ICAST
Springer
DOI: 10.1007/978-3-030-93709-6_20
Abstract
The fifth-generation (5G) wireless communication networks are required to support ultra-high speed broadband communications. The utilization of millimeter wave (mm-wave) bands is needed to meet these requirements. However, communication in the mm-wave band has different propagation properties such as relatively high path losses and atmospheric absorption; the signals are easily blocked by the obstacle and low diffraction around the objects. It is crucial to design compact size antennas with high gain and bandwidth to mitigate these effects. In this paper, a semi-elliptical slotted microstrip patch antenna with defected ground structure configuration operating in the millimeter waveband is proposed. The antenna is designed using Rogers RT5880 substrate material with a thickness of 0.34490 mm and a dielectric constant of 2.2 to operate at 28 GHz. The semi-elliptical slotted radiating patch is mainly used to improve bandwidth and radiation efficiency. The defected-ground structure is used to enhance both the bandwidth and gain of the antenna. The defect structure (slot) positions and sizes are optimized to obtain considerably high bandwidth and gain. The inset-fed input matching network becomes easy due to introducing semi-elliptical slots in the radiating patch and defected ground structure. The overall structure of the antenna has a size of (5.8 × 6.4 × 0.3449) mm. The proposed microstrip patch antenna (MPA) with a defect structure is simulated using CST-MW studio and found that its return loss, bandwidth, and gain are –37.784 dB, 1.132 GHz, 7.128 dBi; whereas a typical rectangular MPA without defect structure achieves –34.189 dB, 0.978 GHz, 6.67 dBi, respectively. The simulation results show that simultaneously introducing defected structures in the patch and ground plane of the proposed MPA significantly influences its performance. As compared to existing works, the proposed antenna shows significantly improved performance. It shows a suitable characteristic, in terms of size, bandwidth, and gain, for the needs of IoT applications offered by 5G technology.
