Research Article
A 3-Stacked GaN HEMT Power Amplifier with Independently Biased Technique
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@INPROCEEDINGS{10.1007/978-3-030-63083-6_8, author={Luong Duy Manh and Tran Thi Thu Huong and Bui Quoc Doanh and Vo Quang Son}, title={A 3-Stacked GaN HEMT Power Amplifier with Independently Biased Technique}, proceedings={Industrial Networks and Intelligent Systems. 6th EAI International Conference, INISCOM 2020, Hanoi, Vietnam, August 27--28, 2020, Proceedings}, proceedings_a={INISCOM}, year={2020}, month={11}, keywords={Power amplifier GaN HEMT Independently biased}, doi={10.1007/978-3-030-63083-6_8} }- Luong Duy Manh
Tran Thi Thu Huong
Bui Quoc Doanh
Vo Quang Son
Year: 2020
A 3-Stacked GaN HEMT Power Amplifier with Independently Biased Technique
INISCOM
Springer
DOI: 10.1007/978-3-030-63083-6_8
Abstract
A design of 3-stacked GaN high-electron-mobility transistor radio-frequency power amplifier using independently biased technique is presented. The power amplifier operates at 1.6 GHz for wireless communications applications. By independently setting proper bias conditions, DC power consumption of the power amplifier can be reduced leading to efficiency enhancement without output power degradation. A performance comparison of the proposed power amplifier with a conventional 3-stacked power amplifier has been performed. The simulated results indicate that the proposed power amplifier offers superior efficiency over the conventional one.
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