Advances of Science and Technology. 7th EAI International Conference, ICAST 2019, Bahir Dar, Ethiopia, August 2–4, 2019, Proceedings

Research Article

Enhancement of Power Flow with Reduction of Power Loss Through Proper Placement of FACTS Devices Based on Voltage Stability Index

Download301 downloads
  • @INPROCEEDINGS{10.1007/978-3-030-43690-2_24,
        author={Yeshitela Shiferaw and K. Padma},
        title={Enhancement of Power Flow with Reduction of Power Loss Through Proper Placement of FACTS Devices Based on Voltage Stability Index},
        proceedings={Advances of Science and Technology. 7th EAI International Conference, ICAST 2019, Bahir Dar, Ethiopia, August 2--4, 2019, Proceedings},
        proceedings_a={ICAST},
        year={2020},
        month={6},
        keywords={Optimal placement Thyristor control series compensator Static var compensator Loadability Voltage stability index},
        doi={10.1007/978-3-030-43690-2_24}
    }
    
  • Yeshitela Shiferaw
    K. Padma
    Year: 2020
    Enhancement of Power Flow with Reduction of Power Loss Through Proper Placement of FACTS Devices Based on Voltage Stability Index
    ICAST
    Springer
    DOI: 10.1007/978-3-030-43690-2_24
Yeshitela Shiferaw1,*, K. Padma1,*
  • 1: Andhra University
*Contact email: Yeshitela2010@gmail.com, padma315@gmail.com

Abstract

One of the significant problems in the power system network is the overloading of the transmission system which increases stress on transmission lines. This problem can be mitigated by the addition of isolated and individually controlled devices such as FACTS to the existing networks. Thus, the main objective of this paper is determining the optimal placement of SVC and TCSC FACTS device at bus and lines and minimizing the total power loss & enhances the transferred power by applying these SVC and TCSC FACTS devices. To this end, first, load flow analysis was done using the Newton Raphson technique. Then, the optimal location was found by the voltage stability index (L-indices) and fast voltages stability indices (FVSI). The critical bus has the lowest voltage and the critical line has the largest value of FVSI. Consequently, SVC and TCSC FACTS device is installed on both the critical bus and the critical line respectively. To validate the methodology, we use IEEE-30 bus standard test system network and the simulation is done on PSAT (power system analysis toolbox) in MATLAB. Finally, based on the finding of the simulation result, the best locations for SVC and TCSC FACTS devices for improving power transfer, voltage profile and loadability are the weakest bus and line of the system.