Ubiquitous Communications and Network Computing. Second EAI International Conference, Bangalore, India, February 8–10, 2019, Proceedings

Research Article

System Level Performance Analysis of Designed LNA and Down Converter for IEEE 802.11ad Receiver

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  • @INPROCEEDINGS{10.1007/978-3-030-20615-4_2,
        author={S. Pournamy and Navin Kumar},
        title={System Level Performance Analysis of Designed LNA and Down Converter for IEEE 802.11ad Receiver},
        proceedings={Ubiquitous Communications and Network Computing. Second EAI International Conference, Bangalore, India, February 8--10, 2019, Proceedings},
        proceedings_a={UBICNET},
        year={2019},
        month={5},
        keywords={Low noise amplifier Radio frequency Error vector magnitude},
        doi={10.1007/978-3-030-20615-4_2}
    }
    
  • S. Pournamy
    Navin Kumar
    Year: 2019
    System Level Performance Analysis of Designed LNA and Down Converter for IEEE 802.11ad Receiver
    UBICNET
    Springer
    DOI: 10.1007/978-3-030-20615-4_2
S. Pournamy1, Navin Kumar1,*
  • 1: Amrita Vishwa Vidyapeetham
*Contact email: navinkumar@ieee.org

Abstract

A low noise amplifier (LNA) operating at millimeter wave (mmWave) frequency and a down converter suitable for IEEE 802.11ad receiver is designed in a 65 nm radio frequency (RF)-CMOS low leakage (LL) process. These designed blocks are integrated in a super heterodyne receiver architecture and the overall performance of the receiver is analyzed. The designed LNA gives a performance metric of 20 dB of gain, 1.7 dB of noise figure (NF) and −7.78 dBm of IIP3. Modified Gilbert cell topology is used for down converter which gives a conversion gain of 1.5 dB from 57 GHz to 66 GHz, input P of −7.8dBm and IIP3 of 8.78 dBm with RF at 57.24 GHz from a 1.2 V supply voltage and a 1Vpp of local oscillator (LO) drive. The obtained IIP3 is 10.08 dB higher than the conventional Gilbert cell and offers an error vector magnitude (EVM) improvement of −23 dB at the receiver. This work provides RF designers a comprehensive understanding of system and circuit level on pre silicon base.