Research Article
Fast Statistical Modelling of Temperature Variation on 28 nm FDSOI Technology
254 downloads
@INPROCEEDINGS{10.1007/978-3-030-05195-2_28, author={Abdelgader Abdalla and Isiaka Alimi and Manuel Gonz\^{a}lez and Issa Elfergani and Jonathan Rodriguez}, title={Fast Statistical Modelling of Temperature Variation on 28 nm FDSOI Technology}, proceedings={Broadband Communications, Networks, and Systems. 9th International EAI Conference, Broadnets 2018, Faro, Portugal, September 19--20, 2018, Proceedings}, proceedings_a={BROADNETS}, year={2019}, month={1}, keywords={Statistical modelling Temperature variation 28 nm FDSOI technology}, doi={10.1007/978-3-030-05195-2_28} }- Abdelgader Abdalla
Isiaka Alimi
Manuel González
Issa Elfergani
Jonathan Rodriguez
Year: 2019
Fast Statistical Modelling of Temperature Variation on 28 nm FDSOI Technology
BROADNETS
Springer
DOI: 10.1007/978-3-030-05195-2_28
Abstract
It is well known that the 28 nm fully depleted Silicon-On Insulator (FDSOI) node has a temperature effect due to the inherent pyroelectric and piezoelectric properties. In this paper, we introduce a spatial interpolation Lookup table (LUT) model considering temperature dependence of nanometer CMOS transistors. The novel methodology is used to build the bias current and capacitance LUTs for MOS transistor circuits under extensive variety of temperature values, evaluated under transient analysis. This innovative LUTs model significantly reduce the simulation runtime with sufficient accuracy using adaptive multivariate precomputed Barycentric relational interpolation for the appraisal temperature effects of 28 nm FDSOI node.
Copyright © 2018–2025 ICST
