cogcom 16(8): e3

Research Article

Frequency Modulation based Resistive Sensing for Wearable Galvanic Skin Response

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  • @ARTICLE{10.4108/eai.28-9-2015.2261514,
        author={Md Shamsul Arefin and Jean-Michel Redoute and Mehmet Yuce},
        title={Frequency Modulation based Resistive Sensing for Wearable Galvanic Skin Response},
        journal={EAI Endorsed Transactions on Cognitive Communications},
        volume={2},
        number={8},
        publisher={ACM},
        journal_a={COGCOM},
        year={2015},
        month={12},
        keywords={galvanic skin response, frequency modulation, frequency-to-voltage converter},
        doi={10.4108/eai.28-9-2015.2261514}
    }
    
  • Md Shamsul Arefin
    Jean-Michel Redoute
    Mehmet Yuce
    Year: 2015
    Frequency Modulation based Resistive Sensing for Wearable Galvanic Skin Response
    COGCOM
    EAI
    DOI: 10.4108/eai.28-9-2015.2261514
Md Shamsul Arefin1,*, Jean-Michel Redoute1, Mehmet Yuce1
  • 1: Monash University
*Contact email: md.arefin@monash.edu

Abstract

This paper presents a frequency modulation based readout circuit for the measurement of skin conductance or resistance. A charge pump based frequency-to-voltage converter circuit with adjustable sensitivity is used to convert the frequency shifts due to skin resistance changes into voltage variations. The readout circuit improves the measurement accuracy and artifact rejection in measurements of the galvanic skin response on the skin, and can be integrated with wearable physiological monitoring systems. The readout circuit is designed and fabricated using the UMC 0.18 µm CMOS technology. It occupies an area of 0.18 mm2 and consumes 11.7 mW.