Research Article
Functional Model of Carbon Nanotube Programmable Resistors for Hybrid Nano/CMOS Circuit Design
@INPROCEEDINGS{10.1007/978-3-642-04850-0_16, author={Weisheng Zhao and Guillaume Agnus and Vincent Derycke and Ariana Filoramo and Christian Gamrat and Jean-Philippe Bourgoin}, title={Functional Model of Carbon Nanotube Programmable Resistors for Hybrid Nano/CMOS Circuit Design}, proceedings={Nano-Net. 4th International ICST Conference, Nano-Net 2009, Lucerne, Switzerland, October 18-20, 2009. Proceedings}, proceedings_a={NANO-NET}, year={2012}, month={5}, keywords={Functional Modelling Carbon Nanotube Hybrid Nano/CMOS circuits OG-CNTFET Verilog-A}, doi={10.1007/978-3-642-04850-0_16} }- Weisheng Zhao
Guillaume Agnus
Vincent Derycke
Ariana Filoramo
Christian Gamrat
Jean-Philippe Bourgoin
Year: 2012
Functional Model of Carbon Nanotube Programmable Resistors for Hybrid Nano/CMOS Circuit Design
NANO-NET
Springer
DOI: 10.1007/978-3-642-04850-0_16
Abstract
Hybrid Nano (e.g. Nanotube and Nanowire) /CMOS circuits combine both the advantages of Nano-devices and CMOS technologies; they have thus become the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore’s law. A functional simulation model for an hybrid Nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors (OG-CNTFET), which can be used as 2-terminal programmable resistors. Their resistance can be adjusted precisely, reproducibly and in a non-volatile way, over three orders of magnitude. These interesting behaviors of OG-CNTFET promise great potential for developing the non-volatile memory and neuromorphic adaptive computing circuits. The model is developed in Verilog-A language and implemented on Cadence Virtuoso platform with Spectre 5.1.41 simulator. Many experimental parameters are included in this model to improve the simulation accuracy.