ct 18(15): e5

Research Article

Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications

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  • @ARTICLE{10.4108/eai.10-4-2018.155858,
        author={B.  A. Mohammed and  A. S. Hussaini and R. A. Abd-Alhameed and  I. M. Danjuma and A. S. Asharaa and  I. T. E. Elfergani and J. Rodriguez},
        title={Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications},
        journal={EAI Endorsed Transactions on Creative Technologies},
        volume={5},
        number={15},
        publisher={EAI},
        journal_a={CT},
        year={2018},
        month={4},
        keywords={Balanced Power Amplifier (BPA); Linearity; Power Added Efficiency (PAE); Long Term Evolution (LTE); Digital Predistortion (DPD)},
        doi={10.4108/eai.10-4-2018.155858}
    }
    
  • B. A. Mohammed
    A. S. Hussaini
    R. A. Abd-Alhameed
    I. M. Danjuma
    A. S. Asharaa
    I. T. E. Elfergani
    J. Rodriguez
    Year: 2018
    Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications
    CT
    EAI
    DOI: 10.4108/eai.10-4-2018.155858
B. A. Mohammed1,2,*, A. S. Hussaini3,4, R. A. Abd-Alhameed1,5, I. M. Danjuma1, A. S. Asharaa1, I. T. E. Elfergani4, J. Rodriguez4,6
  • 1: School of Engineering, Design and Technology, University of Bradford, Bradford, BD7 1DP, UK
  • 2: National Space Research and Development Agency, Abuja, Nigeria
  • 3: School of Information Technology and Computing, American University Yola, Adamawa, Nigeria
  • 4: Instituto de Telecomunicacoes, Aveiro, Portugal
  • 5: Depart. of Communication and Informatics Eng., Basra University College of Science and Technology, Basra 61004, Iraq
  • 6: University of South Wales, UK
*Contact email: m.b.abubakar1@student.bradford.ac.uk

Abstract

In this paper, a 15.5W Si-LDMOS balanced RF power amplifier has been designed using 2.620-2.690GHz frequency band to improve efficiency and linearity for 5G-LTE mobile applications. The amplifier was designed and simulated using large signal Si-LDMOS transistor model to achieve 53% PAE, 41dBm Pout, 14 dB gain at P1dB saturation point. The proposed balanced RF power amplifier was fabricated and measurement results for phase variation of the signal between the carriers have been the main focus. At 1dB compression point power added efficiency increased to 81.5% with 19.5 gain at the Pout. The AM-AM and AM-PM measured data of the balanced RF power amplifier was extracted from the MATLAB fitting tool to produce polynomials. The polynomials were used in the proposed pre-distortion technique to compensate for the nonlinearities of the balanced power amplifier. A simple linear model was designed for behavioural modelling of the memory-less baseband digital pre-distorter. A Simulink IEEE 802.11a OFDM Transceiver system was used to demonstrate validity of the proposed pre-distorter. To the best of authors’ knowledge, this study presented excellent results of predistortion system that compensated the nonlinearity behaviour of the balanced RF power amplifier using the Simulink version R2011a.