Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron

M. Casalino; L. Sirleto; L. Moretti; F. Della Corte; I. Rendina

2nd Internationa ICST Conference on Nano-Networks

Research Article

Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron

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@INPROCEEDINGS{10.4108/ICST.NANONET2007.2182,
    author={M. Casalino and L. Sirleto and L. Moretti and F. Della Corte and I. Rendina},
    title={Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron},
    proceedings={2nd Internationa ICST Conference on Nano-Networks},
    proceedings_a={NANO-NET},
    year={2010},
    month={5},
    keywords={Fabry-Perot Internal photoemission Photodetectors Resonant cavity enhanced Silicon.},
    doi={10.4108/ICST.NANONET2007.2182}
}

M. Casalino
L. Sirleto
L. Moretti
F. Della Corte
I. Rendina
Year: 2010
Au, Ag and Cu-silicon RCE photodetectors based on the internal photoemission effect at 1.55 micron
NANO-NET
ICST
DOI: 10.4108/ICST.NANONET2007.2182

M. Casalino¹^,*, L. Sirleto²^,*, L. Moretti³^,*, F. Della Corte¹^,*, I. Rendina⁴^,*

1: Università “Mediterranea” di Reggio Calabria Località Feo di Vito - 89060 Reggio Calabria (Italy) Tel. 00390816132345
2: Istittuto per la microelettronica e i micrositemi - CNR Via P. Castellino, 111 - 80131 Napoli (Italy) Tel. 00390816132348
3: Università “Mediterranea” di Reggio Calabria Località Feo di Vito - 89060 Reggio Calabria (Italy)Tel. 00390816132591
4: Istittuto per la microelettronica e imicrositemi - CNR Via P. Castellino, 111 - 80131Napoli (Italy)Tel. 00390816132371

*Contact email: maurizio.casalino@na.imm.cnr.it, luigi.sirleto@na.imm.cnr.it, luigi.moretti@na.imm.cnr.it, francesco.dellacorte@unirc.it, ivo.rendina@na.imm.cnr

Abstract

In this paper, the design of a novel photodetector, working at 1.55μm and completely silicon compatible, is reported. The device is a resonant cavity enhanced (RCE) structure incorporating a silicon photodetector based on the internal photoemission effect. In order to quantify the performance of photodetector, quantum efficiency including the image force effect as a function of bias voltage are analytically calculated. Moreover we propose a comparison among three different Schottky barrier Silicon photodetectors, having as metal layers gold, silver or copper, respectively.

Keywords: Fabry-Perot Internal photoemission Photodetectors Resonant cavity enhanced Silicon.

Published: 2010-05-16
Modified: 2011-09-12

: http://dx.doi.org/10.4108/ICST.NANONET2007.2182