Research Article
A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations
@INPROCEEDINGS{10.1007/978-3-030-05195-2_44, author={Ahmed Abdulkhaleq and Yasir Al-Yasir and Naser Ojaroudi Parchin and Jack Brunning and Neil McEwan and Ashwain Rayit and Raed Abd-Alhameed and James Noras and Nabeel Abduljabbar}, title={A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations}, proceedings={Broadband Communications, Networks, and Systems. 9th International EAI Conference, Broadnets 2018, Faro, Portugal, September 19--20, 2018, Proceedings}, proceedings_a={BROADNETS}, year={2019}, month={1}, keywords={Asymmetrical Doherty Power amplifier Drain efficiency GaN HEMTs Wireless communications LTE-Advanced}, doi={10.1007/978-3-030-05195-2_44} }- Ahmed Abdulkhaleq
Yasir Al-Yasir
Naser Ojaroudi Parchin
Jack Brunning
Neil McEwan
Ashwain Rayit
Raed Abd-Alhameed
James Noras
Nabeel Abduljabbar
Year: 2019
A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations
BROADNETS
Springer
DOI: 10.1007/978-3-030-05195-2_44
Abstract
Much attention has been paid to making 5G developments more energy efficient, especially in view of the need for using high data rates with more complex modulation schemes within a limited bandwidth. The concept of the Doherty power amplifier for improving amplifier efficiency is explained in addition to a case study of a 70 W asymmetrical Doherty power Amplifier using two GaN HEMTs transistors with peak power ratings of 45 W and 25 W. The rationale for this choice of power ratio is discussed. The designed circuit works in the 3.4 GHz frequency band with 200 MHz bandwidth. Rogers RO4350B substrate with dielectric constant εr = 4.66 and thickness 0.035 mm is used. The performance analysis of the Doherty power amplifier is simulated using AWR MWO software. The simulated results showed that 54–64% drain efficiency has been achieved at 8 dB back-off within the specified bandwidth with an average gain of 10.7 dB.